Development of amorphous semi-metallic nano-ultra-thin film material with opposite properties to metal

Korean researchers have developed a new metal material that is different from existing metals.

A joint research team from Ajou University and Stanford University said they have developed an amorphous semi-metallic nano-ultra-thin material, a new metal material whose resistivity rapidly decreases as the thickness of the thin film decreases.

Until now, materials such as copper, Maldives (Mo), and ruthenium (Ru), which are used as semiconductor metal wiring materials, have been difficult to use in semiconductor devices due to a sharp increase in resistivity below a certain thickness.

The new material developed this time shows the opposite characteristics of existing metals without a separate high-temperature process, and is compatible enough to be applied to current semiconductor processes.

The results of this study were published in the global international journal 'Science'.